c o p y r igh t @ w i n s em i microelectronics c o . , lt d . , a l l ri g h t r e s er v ed . w w w w f f f f w064n w064n w064n w064n rev.a oct .201 1 silicon silicon silicon silicon n-channel n-channel n-channel n-channel mosfet mosfet mosfet mosfet features 109a,60v, r ds(on) (max 8m ? )@v gs =10v ultra-low gate charge(typical 50nc) fast switching capability 100%avalanche tested maximum junction temperature range (150 ) general description this power mosfet is produced using winsemi s advanced planar stripe,dmos technology. this latest technology has beenespecially designed to minimize on-state resistance ,have a lowgate charge with superior switching performance ,and ruggedavalanche characteristics.this power mosfet is well suited for synchronous dc-dc converters and power management inportable and battery operated products. absolute maximum ratings symbol parameter value units v dss drain source voltage 60 v i d continuous drain current(@tc=25 ) 109 a continuous drain current(@tc=100 ) 80 a i dm drain current pulsed (note1) 390 a v gs gate to source voltage 20 v e ar repetitive avalanche energy (note1) 20 mj dv/dt peak diode recovery dv /dt (note3) 5.0 v/ ns p d total power dissipation(@tc=25 ) 185 w derating factor above 25 1.1 w/ t j junction temperature 150 t stg storage temperature -55~ 150 t l channel temperature 300 thermal characteristics symbol parameter value units min typ max r qjc thermal resistance , junction -to -case - - 0.68 /w r qja thermal resistance , junction-to -ambient - - 40 /w
steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance w w w w f f f f w064n w064n w064n w064n 2 / 7 electrical characteristics(tc=25 ) characteristics symbol test condition min typ max unit gate leakage current i gss vgs = 2 0 v, vds = 0 v - - 100 na gate-source breakdown voltage v (br)gss i g = 10 a,v ds =0v 30 - - v drain cut -off current i dss v ds = 55 v,v gs =0v - - 25 a v ds =44v, v gs =0v ,t j =125 - - 250 a drain -source breakdown voltage v (br)dss i d =250 a,v gs =0v 60 - - v breakdown voltage temperature coefficient bv dss / t j i d =1ma, referenced to 25 - 0.057 - v/ gate threshold voltage v gs(th) v ds =v gs ,i d =250 a 2 - 4 v drain -source on resistance r ds(on) v gs =10v,i d = 55 a - - 8.0 m ? forward transconductance gfs v ds = 25 v,i d = 55 a 44 - - s input capacitance c iss v ds =25v, v gs =0v, f=1mhz - 3980 - pf reverse transfer capacitance c rss - 470 - output capacitance c oss - 1290 - switching time rise time tr v dd = 28 v, i d = 55 a r g = 2.5 ? v gs = 1 0v (note4,5) - 100 - ns turn- o n delay time t d( on ) - 14 - fall time tf - 70 - turn-off delay time td( off ) - 43 - total gate charge(gate-source plus gate-drain) qg v d s = 44 v, i d = 55 a v g s =1 0 v, (note 4 ,5) - 170 nc gate-source charge qgs - 32 gate-drain("miller") charge qgd - 74 source-drain ratings and characteristics(ta=25 ) characteristics symbol test condition min type max unit continuous drain reverse current i dr - - - 109 a pulse drain reverse current i drp - - - 390 a forward voltage(diode) v dsf i dr = 1 a,v gs =0v - - 1.2 v reverse recovery time trr i dr = 55 a, t j =25 di dr / dt =100 a / s - 100 170 ns reverse recovery charge qrr - 450 680 c note 1.repeativity rating :pulse width limited by junction temperature 2.l= 190u h i as = 55 a,,r g = 25 ? ,starting t j =25 3.i sd 55 a,di/dt 290 a/us,v dd < bv dss , t j 150 4.pulse test:pulse width 40 0us,duty cycle 2% 5. essentially independent of operating temperature. this transistor is an electrostatic sensitive device please handle with caution
steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance w w w w f f f f w064n w064n w064n w064n 3 / 7 fig.3 transfer characteristics fig.5 capacitance variation vs drain voltage fig.6 gate charge characteristics fig. 4 on-resistance variation vs junction temperature 55 fig.1 on state characteristics fig. 2 on state characteristics
steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance w w w w f f f f w064n w064n w064n w064n 4 / 7 fig.7 maximum safe operation area fig.8 maximum drain current vs case temperature fig.9 transient thermal response curve 50
steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance w w w w f f f f w064n w064n w064n w064n 5 / 7 fig.10 gate test circuit & waveform fig.11 resistive switching test circuit & waveform fig.12 unclamped inductive switching test circuit & waveform
steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance w w w w f f f f w064n w064n w064n w064n 6 / 7 fig.13 peak diode recovery dv/dt test circuit & waveform
steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance w w w w f f f f w064n w064n w064n w064n 7 / 7 to-2 to-2 to-2 to-2 47 47 47 47 package package package package dimension dimension dimension dimension unit:mm
|
